Residual acceptors in natural GaSb and Gaxln1−xSb; their contribution to transport between 4.7 and 300 °K

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Abstract
A comparative study is made concerning the role played by residual acceptors in transport, for three samples of natural GaSb (one of them is obtained by crystal growing from a nonstoichiometric melt) and three samples of Gaxln1−xSb with x=0.96, 0.90, and 0.775. In GaSb, in the high‐temperature range, experimental results of Hall effect and resistivity vs temperature are analyzed in a two valence‐band and one acceptor‐level model. Activation energy EA and density NA of acceptors are deduced as well as density of compensating donors ND. It is shown that NA is decreased by growing crystal from a nonstoichiometric gallium‐rich melt. In the alloy NA and EA decrease with decreasing x. The low‐temperature‐range conduction is discussed for the samples investigated.