Thermal wave implant dosimetry for process control on product wafers
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1-4) , 559-562
- https://doi.org/10.1016/0168-583x(87)90903-7
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Ion implant monitoring with thermal wave technologyApplied Physics Letters, 1985
- Thermal and plasma wave depth profiling in siliconApplied Physics Letters, 1985
- Detection of thermal waves through optical reflectanceApplied Physics Letters, 1985
- Interaction effects in the weakly localized regime and the anomalous conductivity of Sb-doped Ge at low temperatureSolid-State Electronics, 1985
- Simplified long-channel MOSFET theorySolid-State Electronics, 1983
- Post-implant methods for characterizing the doping uniformity and dose accuracy of ion implantation equipmentNuclear Instruments and Methods in Physics Research, 1981