Post-implant methods for characterizing the doping uniformity and dose accuracy of ion implantation equipment
- 1 October 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 189 (1) , 265-274
- https://doi.org/10.1016/0029-554x(81)90153-1
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- On-line capacitance—Voltage doping profile measurement of low-dose ion implantsIEEE Transactions on Electron Devices, 1980
- High-temperature carrier transport in n-type epitaxial GaAsSolid-State Electronics, 1980
- High current dosimetry techniquesRadiation Effects, 1979
- Spatial dose uniformity monitor for electrically scanned ion beamReview of Scientific Instruments, 1978
- Secondary particle collection in ion implantation dose measurementReview of Scientific Instruments, 1978
- Hot electrons and phonons under high intensity photoexcitation of semiconductorsSolid-State Electronics, 1978
- Four‐Point Probe Correction Factors for Use in Measuring Large Diameter Doped Semiconductor WafersJournal of the Electrochemical Society, 1976
- Limitations of the CV technique for ion-implanted profilesIEEE Transactions on Electron Devices, 1975
- Correcting interface-state errors in MOS doping profile determinationsJournal of Applied Physics, 1973
- Silicon Impurity Distribution as Revealed by Pulsed MOS C-V MeasurementsJournal of the Electrochemical Society, 1971