Chemical-mechanical polishing of copper for interconnect formation
- 31 January 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 33 (1-4) , 249-257
- https://doi.org/10.1016/s0167-9317(96)00051-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The effect of the polishing pad treatments on the chemical-mechanical polishing of SiO2 filmsThin Solid Films, 1995
- Chemical-mechanical polishing of copper with oxide and polymer interlevel dielectricsThin Solid Films, 1995
- Chemical-Mechanical Planarization of Aluminum-Based Alloys for Multilevel MetallizationMRS Bulletin, 1995
- Chemical mechanical polishing of copper for multilevel metallizationApplied Surface Science, 1995
- Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturingThin Solid Films, 1992
- Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip InterconnectsJournal of the Electrochemical Society, 1991
- A Two‐Dimensional Process Model for Chemimechanical Polish PlanarizationJournal of the Electrochemical Society, 1991