Electronic properties of the InP(100) surface
- 3 March 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 168 (1-3) , 68-73
- https://doi.org/10.1016/0039-6028(86)90837-x
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Chemical and morphological aspects of the build-up of the interface between InP(100) and column III metal overlayersSurface Science, 1986
- Growth of Single‐Crystalline Epitaxial Group II Fluoride Films on InP ( 001 ) by Molecular‐Beam EpitaxyJournal of the Electrochemical Society, 1983
- Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBESurface Science, 1980
- Photoemission studies of the initial stages of oxidation of GaSb and InPSurface Science, 1979
- Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiationPhysical Review B, 1978
- Electronic surface properties of Ga and In containing III–V compoundsJournal of Vacuum Science and Technology, 1977
- Electronic surface properties of III–V semiconductors: Excitonic effects, band-bending effects, and interactions with Au and O adsorbate layersJournal of Vacuum Science and Technology, 1976
- Surface characterisation of indium phosphideSurface Science, 1975
- Observation of a Band of Silicon Surface States Containing One Electron Per Surface AtomPhysical Review Letters, 1972
- Emploi quantitatif de la spectroscopie Auger; Étalonnage de la méthodeSurface Science, 1971