Thermal oxidation and native oxide-substrate reactions on InAs and InxGa1−xAs
- 1 August 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 94 (3) , 213-222
- https://doi.org/10.1016/0040-6090(82)90298-x
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Condensed phase diagram for the In-As-O systemThin Solid Films, 1982
- Discussion of “ GaAs Oxidation and the Ga‐As‐O Equilibrium Phase Diagram” [C. D. Thurmond, G. P. Schwartz, G. W. Kammlott, and B. Schwartz (pp. 1366–1371, Vol. 127, No. 6)]Journal of the Electrochemical Society, 1981
- Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaPJournal of the Electrochemical Society, 1980
- Interfacial Reactions in Plasma‐Grown Native Oxide ‐ GaAs StructuresJournal of the Electrochemical Society, 1980
- GaAs Oxidation and the Ga‐As‐O Equilibrium Phase DiagramJournal of the Electrochemical Society, 1980
- Ba5SiO4Cl6 : Eu , A New Blue‐Emitting Photoluminescent Material with High Quenching TemperatureJournal of the Electrochemical Society, 1979
- Interfacial reactions on anodized GaAsJournal of Vacuum Science and Technology, 1979
- Analysis of plasma-grown GaAs oxide filmsApplied Physics Letters, 1977
- The combined use of He back-scattering and He-induced X-rays in the study of anodically grown oxide films on GaAsThin Solid Films, 1973
- The Raman effect in crystalsAdvances in Physics, 1964