Atomic model for blue luminescences in Mg-doped GaN
- 1 January 1999
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 14 (2) , 138-142
- https://doi.org/10.1088/0268-1242/14/2/006
Abstract
We investigate the origin of the broad luminescence observed around 2.7-2.9 eV in heavily Mg-doped GaN through first-principles pseudopotential calculations. We find that a defect complex composed of an Mg interstitial and an N vacancy gives rise to optical transition levels around 2.8 eV above the valence band maximum, suggesting that the blue luminescences are caused by deep-donor-to-valence-band transitions. The formation of the - complex is enhanced by hydrogenation and is more preferable in p-type samples grown under Ga-rich conditions.Keywords
This publication has 17 references indexed in Scilit:
- Study of Mg Associated Levels in GaNSolid State Phenomena, 1997
- Point-defect complexes and broadband luminescence in GaN and AlNPhysical Review B, 1997
- Gallium vacancies and the yellow luminescence in GaNApplied Physics Letters, 1996
- Mechanisms of band-edge emission in Mg-doped p-type GaNApplied Physics Letters, 1996
- Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxyApplied Physics Letters, 1995
- Atomic geometry and electronic structure of native defects in GaNPhysical Review B, 1994
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- High-power InGaN/GaN double-heterostructure violet light emitting diodesApplied Physics Letters, 1993
- Thermal Annealing Effects on P-Type Mg-Doped GaN FilmsJapanese Journal of Applied Physics, 1992
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989