Hyperfine interaction in phosphorus-doped amorphous silicon–germanium alloys
- 1 April 1988
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 57 (4) , 235-240
- https://doi.org/10.1080/09500838808214713
Abstract
We present a study of the hyperfine structure in the electron spin resonance spectra of phosphorus-doped a-Si0·7Ge0·3: H. Electron bombardment and annealing are used to vary the defect density and to shift the Fermi level in the range 0·45C–EF0 2).Keywords
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