P-related defects in P-doped a-Si:H
- 28 February 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 53 (6) , 543-546
- https://doi.org/10.1016/0038-1098(85)90188-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electron spin resonance of doped glow‐discharge amorphous germaniumPhysica Status Solidi (b), 1983
- Electron Spin Resonance of Doped Glow‐Discharge Amorphous SiliconPhysica Status Solidi (b), 1981
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980
- Valence orbital ionization potentials from atomic spectral dataTheoretical Chemistry Accounts, 1965
- Atomic Screening Constants from SCF FunctionsThe Journal of Chemical Physics, 1963