Semiconductor Superlattices-A New Material For Research and Applications
- 1 August 1981
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. 24 (2) , 430-439
- https://doi.org/10.1088/0031-8949/24/2/019
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructuresSolid State Communications, 1979
- Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxyJournal of Crystal Growth, 1978
- A new technique for multilayer LPEJournal of Crystal Growth, 1977
- Report of the International Mineralogical Association (IMA)–International Union of Crystallography (IUCr) Joint Committee on NomenclatureActa Crystallographica Section A, 1977
- Beryllium doping and diffusion in molecular-beam epitaxy of GaAs and AlxGa1−xAsJournal of Applied Physics, 1977
- Liquid Phase Epitaxy Apparatus for Multiple Layers Utilizing Centrifugal ForcesJapanese Journal of Applied Physics, 1977
- Structures Grown by Molecular Beam EpitaxyJournal of Vacuum Science and Technology, 1973
- Electrical and Optical Properties of Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972
- Electron States in Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972