rf-sputtered tungsten-amorphous silicon Schottky barrier diodes

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Abstract
In this paper, we report on the results of a detailed study of the properties of a Mo/a‐Si/a‐Si:H/W Schottky barrier produced by rf diode reactive sputtering. This paper is divided into two sections. In the first part, the Mo/a‐Si and W/a‐Si:H interfaces are investigated using a grazing incidence x‐ray diffraction method. The W/a‐Si:H interface seems to be inert, while the Mo/a‐Si one is highly reactive: the Mo3Si compound is identified without ambiguity. The second part deals with the electrical properties of a Mo/a‐Si/a‐Si:H/W Schottky barrier. The experimental I‐V characteristics were analyzed using a numerical method. The most important diode parameters were deduced: the barrier height value was 0.69 eV, the density of states near the Fermi level was 1.2×1017 cm−3 eV−1, and the depletion region thickness was 0.2 μm.