CO2 laser-induced chemical vapor deposition of titanium silicide films
- 1 September 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (5) , 476-478
- https://doi.org/10.1063/1.96097
Abstract
We have developed a CO2 laser‐induced chemical vapor deposition (CVD) process to deposit films of titanium silicide from a gaseous mixture of SiH4 and TiCl4. Such films are suitable for gate electrodes, interconnects, and contacts on present and future generations of very large scale integrated circuits. Films deposited at a 400 °C substrate temperature are amorphous and have a resistivity of 300 μΩ cm. Annealing at 800 °C converts the films to polycrystalline TiSi2 with a resistivity of 20 μΩ cm. The initial film composition can be varied by changing the SiH4/TiCl4 gas ratio. The CO2 laser induces thermal chemical reactions in the CVD reactor. Observed gas phase reaction products are those predicted by thermodynamics.Keywords
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