Role of SiH4 Gas Heating in the Growth of Hydrogenated Microcrystalline Silicon
- 1 June 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (6A) , L676
- https://doi.org/10.1143/jjap.35.l676
Abstract
The effect of SiH4 source gas heating on the early stage of growth of hydrogenated microcrystalline silicon (µ c-Si : H) by plasma-enhanced chemical vapor deposition (PECVD) from SiH4 and H2 has been investigated to improve the film crystallinity and inhomogeneities. The crystallinity is improved without increasing the surface roughness on thermally grown SiO2 when the cathode temperature, T c, is greater than 500° C. The major role of SiH4 gas heating is not only to increase the temperature of the growing surface but also to the thermally activate the deposition precursors on the growing surface and/or to generate polymerized precursors in the gas phase.Keywords
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