Crystallization at initial stage of low-temperature polycrystalline silicon growth using ZnS buffer layer with 〈111〉 preferred orientation
- 19 September 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (12) , 1549-1551
- https://doi.org/10.1063/1.112940
Abstract
No abstract availableKeywords
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