The sputtering of SiO2 and its dependence on oxygen partial pressure
- 1 July 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 82 (2) , 291-300
- https://doi.org/10.1016/0168-583x(93)96031-7
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Trapping of atmospheric oxygen on metal surfaces under Ar+ ion bombardmeNTSurface Science, 1989
- The influence of bombardment conditions upon the sputtering and secondary ion yields of siliconApplications of Surface Science, 1981
- Sputter-erosion and impurity emission from titanium and vanadium at low-energy ion bombardmentJournal of Nuclear Materials, 1978
- Sputtering of potassium chloride by H, He, and Ar ionsNuclear Instruments and Methods, 1976
- Sputtering yields and Specific energy losses of Ar+Ions with energies from 5 TO 30 KeV AT SiO2Radiation Effects, 1974
- Technical Feasibility of Figuring Optical Surfaces by Ion PolishingApplied Optics, 1971
- Sputtering and Strain of Silicon by Ion ImplantationJournal of Applied Physics, 1971
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969
- Effect of Oxygen on the rf-Sputtering Rate of SiO2Journal of Vacuum Science and Technology, 1968
- Sputtering experiments in the high energy regionNuclear Instruments and Methods, 1961