Tilted magnetic field studies of spin- and valley-splittings in Si/Si1 − xGex heterostructures
- 1 July 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 361-362, 542-546
- https://doi.org/10.1016/0039-6028(96)00465-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe HeterostructuresPhysical Review Letters, 1994
- Strained Si/SiGe heterostructures for device applicationsSolid-State Electronics, 1994
- 2DEG in strained Si/SiGe heterostructuresSurface Science, 1994
- Quantized Hall effects in high-electron-mobility Si/Ge structuresPhysical Review B, 1992
- Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/ heterostructuresPhysical Review B, 1992
- High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layerSemiconductor Science and Technology, 1992
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968