Study of quantum well intermixing caused by grown-in defects
- 1 September 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (5) , 3090-3092
- https://doi.org/10.1063/1.1287406
Abstract
Peer reviewed: NoNRC publication: YeThis publication has 7 references indexed in Scilit:
- Enhanced group-V intermixing in InGaAs/InP quantum wells studied by cross-sectional scanning tunneling microscopyApplied Physics Letters, 1999
- Interdiffusion in InGaAs/GaAs: The effect of growth conditionsJournal of Applied Physics, 1998
- Photonic integrated circuits fabricated using ion implantationIEEE Journal of Selected Topics in Quantum Electronics, 1998
- Determination of interdiffusion coefficients of cations and anions in InGaAs/InP superlatticeApplied Physics Letters, 1997
- Polarization insensitive InGaAs/InGaAsP/InP amplifiers using quantum well intermixingApplied Physics Letters, 1996
- Kinetics of compositional disordering of AlGaAs/GaAs quantum wells induced by low-temperature grown GaAsJournal of Applied Physics, 1995
- Effects of Different Cation and Anion Interdiffusion Rates in Disordered In0.53Ga0.47As/InP Single Quantum WellsJapanese Journal of Applied Physics, 1995