Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment
- 1 May 2000
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 7 (3-4) , 408-412
- https://doi.org/10.1016/s1386-9477(99)00351-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloyingPhysical Review B, 1998
- Asymmetric Stark shift in self-assembled dotsPhysical Review B, 1998
- Comparison of the electronic structure ofpyramidal quantum dots with different facet orientationsPhysical Review B, 1998
- Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximationsPhysical Review B, 1998
- Charged Excitons in Self-Assembled Semiconductor Quantum DotsPhysical Review Letters, 1997
- Surface segregation in (Ga,In)As/GaAs quantum boxesPhysical Review B, 1997
- Electronic structure of InAs/GaAs self-assembled quantum dotsPhysical Review B, 1996
- InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structurePhysical Review B, 1995
- Heterojunction band offsets and effective masses in III-V quaternary alloysSemiconductor Science and Technology, 1991
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985