Epitaxial BiFeO3 thin films on Si
- 27 September 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (13) , 2574-2576
- https://doi.org/10.1063/1.1799234
Abstract
was studied as an alternative environmentally clean ferro/piezoelectric material. -thick films were grown on substrates with as a template layer and as bottom electrode. X-ray and transmission electron microscopy studies confirmed the epitaxial growth of the films. The spontaneous polarization of the films was . Retention measurement up to several days showed no decay of polarization. A piezoelectric coefficient of was observed, which is promising for applications in micro-electro-mechanical systems and actuators.
Keywords
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