High quality self-nucleated AlxGa1−x N layers on (00.1) sapphire by low-pressure metalorganic chemical vapor deposition
- 17 October 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (16) , 2024-2026
- https://doi.org/10.1063/1.112782
Abstract
High quality AlxGa1−xN alloy films with xx (Vegard’s law is obeyed) and that homogeneous and inhomogeneous strain and alloy clustering are minimized in these self‐nucleated AlxGa1−xN films. Consistent with their reduced strain and chemical uniformity, the derived optical band gaps of these AlxGa1−xN films also show a linear dependence on alloy composition x, yielding a bowing parameter b≊0 eV.Keywords
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