Characterization of Strained GaP/Si Heterostructure by Spectroscopic Ellipsometry
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2R) , 530
- https://doi.org/10.1143/jjap.34.530
Abstract
Spectroscopic ellipsometry has been used to study the strained epitaxial layers of GaP on a Si substrate with varying thicknesses. The variation of band-gap energy from the bulk value (ΔE 1) for the GaP layer and Si substrate is determined by a new method of analysis, together with the thicknesses of the surface natural oxide layer and the epitaxial GaP layer. The results are compared with the data from the literature.Keywords
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