The influence of substrate temperature during ion beam deposition on the diamond-like or graphitic nature of carbon films
- 31 March 1993
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 2 (2-4) , 285-290
- https://doi.org/10.1016/0925-9635(93)90069-e
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Direct ion beam deposition of carbon films on silicon in the ion energy range of 15–500 eVJournal of Applied Physics, 1991
- Subplantation model for film growth from hyperthermal species: Application to diamondPhysical Review Letters, 1989
- Ion beam deposition in materials researchNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Interactions of low energy reactive ions with surfaces. IV. Chemically bonded diamond-like films from ion-beam depositionThe Journal of Chemical Physics, 1988
- Ion beam bombardment effects during films depositionVacuum, 1988
- Negative ion source (NIABNIS) and preparation of transparent carbon films by negative carbon ion beam depositionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Ion-based methods for optical thin film depositionJournal of Materials Science, 1986
- Preparation and structure of carbon film deposited by a mass-separated C+ ion beamJournal of Applied Physics, 1984
- The epitaxial synthesis of diamond by the deposition of low energy carbon ionsVacuum, 1984
- Ion-Beam Deposition of Thin Films of Diamondlike CarbonJournal of Applied Physics, 1971