Evidence for Creation of Gallium Antisite Defect in Surface Region of Bleat-Treated GaAs

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Abstract
The origin of a defect responsible for a 1.44 eV photoluminescence band in Si implanted GaAs, which is created during annealing at high temperatures and affects the activation efficiency, was investigated. An identical 1.44 eV PL band is observed even in unimplanted LEC, LPE and HB GaAs, indicating that Si and B atoms are not involved in the defect. We observed for the first time 1.32 and 1.28 eV PL bands in Si-implanted and annealed LEC GaAs. These are considered to be related to a negative charge state of a 77 meV double acceptor. It is concluded from these results that the defect giving rise to the 1.44 eV band is the Ga antisite defect, GaAs, which acts as a 77 meV double acceptor.