Atomic arrangement of spontaneously orderedP/GaAs
- 15 July 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (2) , 1159-1163
- https://doi.org/10.1103/physrevb.40.1159
Abstract
The atomic arrangement of P grown by organometallic vapor-phase epitaxy has been investigated using transmission electron microscopy (TEM) and Raman scattering measurement. The TEM image reveals that the long-range periodic atomic arrangement is distributed throughout almost the entire epilayer. However, between ordered and disordered alloys, there is little difference in the Raman spectrum. This is probably due to the presence of deviations in atomic positions from the regular zinc-blende structure.
Keywords
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