Fine structure of the oxygen-related local mode at 714 cm−1 in GaAs
- 25 December 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (26) , 2736-2738
- https://doi.org/10.1063/1.102269
Abstract
Infrared absorption measurements on a new third state of the Ga‐O‐Ga center in GaAs are reported. This state gives rise to a local mode at 714 cm−1, B’, which is shifted from the band B to lower energy by 0.67 cm−1. The B’ state acts as an intermediate state for the photoinduced conversion from the 730 cm−1 band, A, to B. The kinetics is quantitatively described by a model considering successive capture of conduction‐band electrons, which have been photoexcited from the EL2 level. The reappearance of the band A after quenching of EL2 occurs through the corresponding sequence B→B’→A. The experimental results favor the interpretation of B’ in terms of a third charge state being not accessible at thermal equilibrium conditions.Keywords
This publication has 8 references indexed in Scilit:
- Photosensitivity of the 714 and 730 cm−1 absorption bands in semi-insulating GaAs: Evidence for a deep donor involving oxygenApplied Physics Letters, 1989
- Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopyApplied Physics Letters, 1989
- Hole photoionization cross sections of EL2 in GaAsApplied Physics Letters, 1988
- Model study of the local vibration center related to EL2 levels in GaAsApplied Physics Letters, 1988
- Pair of local vibration mode absorption bands related to EL2 defects in semi-insulating GaAsApplied Physics Letters, 1987
- Photoelectric memory effect in GaAsJournal of Applied Physics, 1982
- Statistics of multicharge centers in semiconductors: ApplicationsPhysical Review B, 1981
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961