A phenomenological theory of correlated multiple soft-breakdown events in ultra-thin gate dielectrics
- 22 December 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Statistically independent soft breakdowns redefine oxide reliability specificationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A new model of time evolution of gate leakage current after soft breakdown in ultra-thin gate oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specificationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Impact of MOSFET oxide breakdown on digital circuit operation and reliabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Gate oxide breakdown under Current Limited Constant Voltage StressPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Uncorrelated breakdown of integrated circuitsNature, 2002
- Ultra-thin oxide reliability for ULSI applicationsSemiconductor Science and Technology, 2000
- Percolation models for gate oxide breakdownJournal of Applied Physics, 1999
- New insights in the relation between electron trap generation and the statistical properties of oxide breakdownIEEE Transactions on Electron Devices, 1998
- The statistical distribution of breakdown from multiple breakdown events in one sampleJournal of Physics D: Applied Physics, 1991