Pulsed ion beam irradiation of silicon
- 15 March 1982
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 194 (1-3) , 443-447
- https://doi.org/10.1016/0029-554x(82)90561-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Pulsed Raman measurement of the onset of recrystallization in laser annealingApplied Physics Letters, 1981
- Neutron Diffraction Experiment on a Randomly Mixed Antiferromagnet with Competing Spin AnisotropiesJournal of the Physics Society Japan, 1980
- Ion beam annealing of semiconductorsApplied Physics Letters, 1980
- Raman Measurement of Lattice Temperature during Pulsed Laser Heating of SiliconPhysical Review Letters, 1980
- Reasons to believe pulsed laser annealing of Si does not involve simple thermal meltingPhysics Letters A, 1979
- Nonthermal pulsed laser annealing of Si; plasma annealingPhysics Letters A, 1979
- Arsenic diffusion in silicon melted by high-power nanosecond laser pulsingApplied Physics Letters, 1978