Pb1−xSrxS/PbS double-heterostructure lasers prepared by hot-wall expitaxy
- 31 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (5) , 430-431
- https://doi.org/10.1063/1.101887
Abstract
Pb1−xSrxS/PbS double‐heterostructure stripe contact lasers were prepared for the first time using a hot‐wall expitaxy technique. The laser operated up to 245 K pulsed (2.97 μm) and 174 K cw, which are the highest operating temperatures ever reported for any semiconductor diode lasers operating around 3 μm. In this letter preparation and properties of the Pb1−xSrxS lasers are presented.Keywords
This publication has 7 references indexed in Scilit:
- Near-room-temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniquesApplied Physics Letters, 1988
- Pb1−xEuxS films prepared by hot wall epitaxyApplied Physics Letters, 1988
- Properties of Pb1−xEuxTe films prepared by hot-wall epitaxyJournal of Applied Physics, 1988
- Double heterostructure Pb1−xCdxS1−ySey/PbS/Pb1−xCdxS1−ySey lasers grown by molecular beam epitaxyJournal of Crystal Growth, 1987
- Lead salt quantum well diode lasersSuperlattices and Microstructures, 1985
- Lead strontium sulfide and lead calcium sulfide, two new alloy semiconductorsPhysical Review B, 1982
- Recent advances in lead-chalcogenide diode lasersApplied Physics A, 1979