New physical insights and models for high-voltage LDMOST IC CAD

This publication has 8 references indexed in Scilit:

• Physical DMOST modeling for high-voltage IC CAD
  IEEE Transactions on Electron Devices, 1990
• Network representations of LIGBT structures for CAD of power integrated circuits
  IEEE Transactions on Electron Devices, 1988
• An accurate DC model for high-voltage lateral DMOS transistors suited for CACD
  IEEE Transactions on Electron Devices, 1986
• High-voltage multiple-resistivity drift-region LDMOS
  Solid-State Electronics, 1986
• A physical model for the conductance of gated p-i-n switches
  IEEE Transactions on Electron Devices, 1985
• Effects of drift region parameters on the static properties of power LDMOST
  IEEE Transactions on Electron Devices, 1981
• High voltage thin layer devices (RESURF devices)
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1979
• A computer-aided design model for high-voltage double diffused MOS (DMOS) transistors
  IEEE Journal of Solid-State Circuits, 1976