The effects of radiation damage on the properties of Ni-nGaAs Schottky diodes—II Terminal characteristics
- 30 June 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (6) , 481-488
- https://doi.org/10.1016/0038-1101(76)90011-3
Abstract
No abstract availableKeywords
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