The screw and circular structures of Si and GaAs epitaxial layers
- 1 November 1981
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (2) , 402-405
- https://doi.org/10.1016/0022-0248(81)90044-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Observation of screw dislocations in GaAsJournal of Crystal Growth, 1977
- Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressureJournal of Crystal Growth, 1975
- Mechanism of crystal growth in the SiCl4-H2 systemJournal of Crystal Growth, 1974
- Defect-free nucleation of silicon on {111} silicon surfacesJournal of Crystal Growth, 1974
- Observation of Nucleus Centers on Solution-Grown Germanium Epitaxial LayersJournal of Applied Physics, 1971
- Observation of Partial Dislocations of a Screw Type in Epitaxial Silicon LayersJapanese Journal of Applied Physics, 1968