Film and interface properties of epitaxial metal/insulator/semiconductor systems formed by ionized cluster beam deposition
- 3 March 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 168 (1-3) , 365-375
- https://doi.org/10.1016/0039-6028(86)90866-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Ion–surface interactions during thin film depositionJournal of Vacuum Science & Technology A, 1984
- Vaporized-metal cluster formation and effect of kinetic energy of ionized clusters on film formationThin Solid Films, 1982
- An evaluation of metal and semiconductor films formed by ionized-cluster beam depositionThin Solid Films, 1976
- The electrical effect on Schottky barrier diodes of Si crystallization from Al–Si metal filmsApplied Physics Letters, 1974