New degradation mechanism associated with hydrogen in bipolar transistors under hot carrier stress
- 30 August 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (9) , 1237-1239
- https://doi.org/10.1063/1.109783
Abstract
Avalanche hot carrier induced bipolar device degradation as a function of temperature, current density, and time is reported. The observed drift in emitter-base breakdown voltage (Vebo) is found to be well correlated to changes in forward base (Ib) and collector (Ic) currents. The model of hydrogen release from the Si-SiO2 interface and its subsequent passivation of base dopants during hot carrier stress is proposed to account for such a correlation.Keywords
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