Gallium Diffusions into Silicon and Boron-Doped Silicon

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Abstract
Radiochemical techniques were used to measure the 72Ga distribution profiles resulting from gallium diffusions into intrinsic silicon and into boron‐prediffused extrinsic silicon. Gallium diffusions were conducted from 900 to 1050 °C. Gallium diffusivity in intrinsic silicon is found to be well described by the expression Dint =60 exp(−3.89 eV/kT) cm2/sec and in heavily boron‐doped extrinsic silicon by the relation Dext ≃ 0.008(−2.49eV/kT) cm2/sec. The observed increase in Ga diffusivity with hole concentration is explained by means of a generalized monovacancy diffusion model, in which the diffusion of ionized substitutional impurities in silicon is assumed to be controlled primarily by the concentration vacancies of the opposite charge type.

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