The Retarded Diffusion of Gallium in Silicon. II

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Abstract
The equations of simultaneous diffusion are solved numerically to estimate the effect of the internal electric field on the diffusion of acceptors together with donors. Gallium diffusion is retarded by the presence of donors of high concentration. It is found that the theoretical retardations are generally larger than experimental ones, and that the computed results do not show the difference in retardation which is observed in experiments between arsenic and phosphorus. It is also found experimentally that the simultaneous diffusion may cause the push-out of gallium diffusion under certain conditions. In order to explain these facts, a model is proposed: the diffusion enhancement by the generation of excess vacancies is a mechanism which governs the retardation of gallium in the simultaneous diffusion in conjunction with the internal electric field.

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