AES sputter depth profiles applied to interface analysis of GaInAs/InP grown by atmospheric pressure MOCVD
- 1 April 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 44 (2) , 161-164
- https://doi.org/10.1016/0169-4332(90)90104-8
Abstract
No abstract availableKeywords
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