Studies on the growth of CdTe on Si using ge interfacial layer in an organometallic vapor phase epitaxial system
- 1 September 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (9) , 1047-1051
- https://doi.org/10.1007/bf02653051
Abstract
No abstract availableKeywords
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