Characterization of pulsed laser deposited boron nitride thin films on InP

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Abstract
A new technique for deposition of thin‐film boron nitride (BN) from BN wafers has been demonstrated using a Q‐switched ruby laser. The deposition rate was found to be∼7 Å/pulse at an energy density of 2.5 J cm−2. X‐ray photoelectron spectroscopy was used to confirm the film composition. Infrared absorption peaks were observed at 802, 1370, and 1614 cm−1 characteristic of B—N bonds. The films were found to have an indirect band gap of 4.1 eV with resistivity in excess of 1011 Ω cm and breakdown fields between 3.0×105—1.0×106 V cm−1. The dielectric constant of the films was in the range 3.19–3.28. The minimum interface state density on InP as obtained from C‐V (1 MHz) analysis was typically 6.2×1010 cm−2 eV−1, which increased to 4.1×1011 cm−2 eV−1 after annealing at 200 °C in argon. Scanning electron microscopy studies showed that this resulted in the development of micropores in the film.