Application of RBS and PIXE in specific site determination of S and SI in ion implanted GaAs
- 1 December 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 218 (1-3) , 515-518
- https://doi.org/10.1016/0167-5087(83)91032-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Localized Vibrational Mode Absorption of Ion-Implanted Silicon in GaAsJournal of Applied Physics, 1972