Analytic Boltzmann equation approach for negative differential mobility in two-valley semiconductors
- 21 July 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (3) , 176-178
- https://doi.org/10.1063/1.97216
Abstract
We present results for the negative differential mobility and the distribution function in GaAs and InP for electric fields less than 40 kV/cm based on the analytic solution of the Boltzmann equation for a model with two valleys and three relaxation times. Using the measured low field mobility, lower valley mass, and valley separation energy Δ while adjusting three upper valley parameters, we obtain good agreement with the experimental velocity-field curves. The distribution function in the lower valley shows structure at energies ≊Δ due to the intervalley scattering.Keywords
This publication has 18 references indexed in Scilit:
- High field transport in GaAs, InP and InAsSolid-State Electronics, 1984
- Electron drift velocity in GaAs using a variable frequency microwave time-of-flight techniqueSolid-State Electronics, 1982
- Electron drift velocity in n-GaAs at high electric fieldsSolid-State Electronics, 1977
- GaAs lower conduction-band minima: Ordering and propertiesPhysical Review B, 1976
- Subthreshold velocity-field characteristics for bulk and epitaxial InPJournal of Applied Physics, 1974
- Microwave Measurement of the Velocity-Field Characteristic of n-Type InPApplied Physics Letters, 1972
- Microwave measurement of electron drift velocity in indium phosphide for electric fields up to 50 kV/cmPhysics Letters A, 1972
- Comparison of the microwave velocity/field characteristics of n type InP and n type GaAsElectronics Letters, 1971
- Measurements on the velocity/field characteristic of indium phosphideElectronics Letters, 1971
- MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDEApplied Physics Letters, 1967