Dependence of the electron cross section for the acceptor gold level in silicon on the gold to donor ratio
- 1 October 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (7) , 656-658
- https://doi.org/10.1063/1.93603
Abstract
Current transient spectroscopy was adapted to quasi‐compensated samples for measurement of the electron cross section for the acceptor gold level in Czochralski‐grown silicon in samples with various ratios of the deep level concentration NT to the shallow level concentration ND up to NT/ND = 0.83. The value obtained, (7.05±1)×10−17 cm2, appears to be independent of the NT/ND ratio, in good agreement with previous results for lower NT/ND ratios.Keywords
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