Growth of 6H and 4H–SiC by sublimation epitaxy
- 26 January 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 197 (1-2) , 155-162
- https://doi.org/10.1016/s0022-0248(98)00890-2
Abstract
No abstract availableKeywords
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