Selective-area epitaxy of GaAs using a GaN mask in in-situ processes
- 1 March 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 136 (1-4) , 37-41
- https://doi.org/10.1016/0022-0248(94)90380-8
Abstract
No abstract availableKeywords
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