A novel W-band monolithic push-pull power amplifier
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10647775,p. 92-95
- https://doi.org/10.1109/gaas.1994.636935
Abstract
A monolithic W-band push-pull two-stage power amplifier has been developed using 0.1 pm AlGaAs-InGaAs-GaAs pseudomorphic T-gate power HEMT technology. This novel design utilizes the push-pull scheme to take the advantage of a virtual ground in a push-pull HEMT device pair which eliminates the via hole inductance, and improves the power amplifier performance at millimeter-wave frequency. The measurement results show that a small signal gain of 12 dB, an output power of 19.4 dBm, and a power added efficiency of 13.3% have been achieved at 90 GHz, and presents state-of-the-art performance for a monolithic power amplifiers at this frequency. To our knowledge, this is the first reported monolithic push-pull amplifier at millimeter-wave frequencies.Keywords
This publication has 9 references indexed in Scilit:
- A 0.1-W W-band pseudomorphic HEMT MMIC power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A Ka-band HEMT MMIC 1 watt power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A power HEMT production process for high-efficiency Ka-band MMIC power amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- One watt Q-Band class A pseudomorphic HEMT MMIC amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Millimeter-wave high power amplifiers using pseudomorphic HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMTIEEE Microwave and Guided Wave Letters, 1993
- High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/analysis methodologyIEEE Transactions on Microwave Theory and Techniques, 1992
- High-gain W band pseudomorphic InGaAs power HEMTsIEEE Electron Device Letters, 1991
- Development of GaAs monolithic power amplifiers in X-bandIEEE Transactions on Electron Devices, 1980