Low threshold, compressively-strained InAsP/InGaAsP and strain-compensated InAsP/InGaP 1.3 µm lasers grown by gas source molecular beam epitaxy
- 3 July 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (14) , 1263-1264
- https://doi.org/10.1049/el:19970799
Abstract
1.3 µm wavelength strain-compensated InAsP/InGaP/InGaAsP/InP and compressively-strained InAsP/InGaAsP/InP separate confinement heterostructure multiquantum well lasers grown by gas source molecular beam epitaxy are demonstrated for the first time. Record low threshold current densities of 210 A/cm2 for 2 mm long broad-area compressively-strained lasers were obtained.Keywords
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