Climb of dissociated dislocations in silicon
- 1 September 1989
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 60 (3) , 385-400
- https://doi.org/10.1080/01418618908213868
Abstract
Climb of dissociated dislocations in silicon has been observed by high-resolution electron microscopy. No nucleation of Frank loops has ever been observed, but climb in silicon occurs by formation of non-dissociated loops. Extrinsic stacking faults can be formed during climb.Keywords
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