The mechanism of dislocation climb in GaAs under electron irradiation
- 1 May 1985
- journal article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 51 (5) , 661-674
- https://doi.org/10.1080/01418618508245280
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- The climb of dissociated dislocations in a quenched Cu-13·43 at.% Al alloyPhilosophical Magazine A, 1983
- Observations on the climb of extended dislocations due to irradiation in the HVEMPhilosophical Magazine A, 1980
- Mechanism of climb of dissociated dislocationsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1980
- Climb asymmetry in degraded gallium arsenide lasersPhilosophical Magazine A, 1980
- On the formation of prismatic loops in quenched F.C.C. metals and alloysPhysica Status Solidi (a), 1977
- Defect structure of degraded heterojunction GaAlAs−GaAs lasersApplied Physics Letters, 1975
- The preferential trapping of interstitials at dislocationsPhilosophical Magazine, 1975
- Observation of Recombination-Enhanced Defect Reactions in SemiconductorsPhysical Review Letters, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973
- Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasersApplied Physics Letters, 1973