Status and trends of silicon RF technology

This publication has 29 references indexed in Scilit:

• RF circuit design aspects of spiral inductors on silicon
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• An assessment of the state-of-the-art 0.5 μm bulk CMOS technology for RF applications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• RF potential of a 0.18-μm CMOS logic device technology
  IEEE Transactions on Electron Devices, 2000
• CMOS technology characterization for analog and RF design
  IEEE Journal of Solid-State Circuits, 1999
• SiGe power HBT's for low-voltage, high-performance RF applications
  IEEE Electron Device Letters, 1998
• 0.18 /spl mu/m CMOS Technology For High-performance, Low-power, And RF Applications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1997
• Identification of gate electrode discontinuities in submicron CMOS technologies, and effect on circuit performance
  IEEE Transactions on Electron Devices, 1996
• Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
  IEEE Transactions on Electron Devices, 1995
• A deep-submicrometer microwave/digital CMOS/SOS technology
  IEEE Electron Device Letters, 1991