Defect generation in silicon
- 1 March 1971
- journal article
- 1970 electronic-materials-conference
- Published by Springer Nature in Metallurgical Transactions
- Vol. 2 (3) , 677-681
- https://doi.org/10.1007/bf02662721
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- VACANCY CLUSTERS IN DISLOCATION-FREE SILICONApplied Physics Letters, 1970
- Thermal Stress and Plastic Deformation of Thin Silicon SlicesJournal of Applied Physics, 1969
- The electrical properties of dislocations in silicon—ISolid-State Electronics, 1969
- The effects of contamination on the electrical properties of edge dislocations in siliconPhilosophical Magazine, 1968
- Observation of Parallel Arrays of Pure Edge Dislocations in SiliconJournal of Applied Physics, 1968
- Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance methodSolid-State Electronics, 1966
- The Influence of Crystallographic Defects on Device PerformanceJournal of the Electrochemical Society, 1966