Hydrogen profiling and the stoichiometry of an a-SiNx: H film
- 1 March 1995
- Vol. 46 (3) , 265-267
- https://doi.org/10.1016/0042-207x(94)00056-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- On the use of a d E-E telescope in elastic recoil detectionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Growth and characterization of silicon-nitride films by plasma-enhanced chemical vapor depositionApplied Surface Science, 1991
- The effect of MeV ion irradiation on the hydrogen content and resistivity of direct ion beam deposited diamondlike carbonNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Hydrogen release during erd analysis of hydrogen in amorphous carbon films prepared by rf-sputteringNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- 15 UD Pelletron of the Nuclear Science Centre — status reportNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1988
- Chemical and physical changes induced in polyvinylidene fluoride by irradiation with high energy ionsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Depth profiling of hydrogen in thin films with the elastic recoil detection techniqueNuclear Instruments and Methods in Physics Research, 1983
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978
- The use of 6Li and 35Cl ion beams in surface analysisNuclear Instruments and Methods, 1978
- Optical Absorption as a Control Test for Plasma Silicon Nitride DepositionJournal of the Electrochemical Society, 1978